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| Datasheet File OCR Text: |
| process CP767 small signal transistor pnp- saturated switch transistor chip princip al device types 2n3467 2n3468 geometry process details r0 (24-june 2003) 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com gross die per 4 inch w afer 12,300 backside collector process epitaxial planar die size 30 x 30 mils die thickness 9.0 mils base bonding pad area 3.85 x 4.20 mils emitter bonding pad area 7.35 x 3.75 mils top side metalization al - 30,000 ? back side metalization au - 15,000? preliminary
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